2SB852

2SB852 KEXIN

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 2

Technical content

0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 www.kexin.com.cn

1 Base

2 Emitter

3 Collector

High-gain Amplifier Transistor 2SB852 ■ Features

• Darlington connection for high DC current gain.
• Built-in 4kΩ resistor between base and emitter. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -6 V Collector Current -Continuous IC -300 mA Collector Power Dissipation(TOTAL) PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-to-base breakdown voltage V(BR)CBO Ic= -100μA, IE=0 -40 V Collector-to-emitter breakdown voltage V(BR)CEO Ic= -1 mA， IB=0 -32 V Emitter-to-base breakdown voltage V(BR)EBO IE= -100 μA， IC=0 -6 V Collector cutoff current IcBO VCB= -24 V , IE=0 -1 μA Collector cutoff current IEBO VCE= -4.5V , IC=0 -1 μA DC current gain hFE VCE= -5V, IC= -100mA 5000 Collector-emitter saturation voltage VCE(sat) IC=-200 mA, IB= -0.4mA -1.5 V Transition frequency fT VCE= -5V, IC= -10mA,f=100MHz 200 MHz Output capacitance Cob VCB=-10V, IE=0A, f=1MHz 3 PF ■ Marking Marking U* R BE 4kΩ C B E

2www.kexin.com.cn ■ Typlacl Characteristics 2SB852 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (°C) Fig.1 Power dissipation curves 100 125 POWER DISSIPATION : P C CMax (%) BASE TO EMITTER VOLTAGE : V BE (V) Fig.2 Ground emitter propagation characteristisc −10 −20 −50 −100 −200 −500 COLLECTOR CURRENT : I C (mA) V CE = −6V Ta =100 Ta =25 Ta = − 0 −1 −20 −40 −60 −80 −100 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.3 Ground emitter output characteristics COLLECTOR CURRENT : I C (mA) Ta=25°C I B −2µA −3µA −4µA −5µA −6µA −7µA −8µA −9µA −10µA −1000 −2000 100000 20000 10000 2000 1000 200 100 500 5000 50000 COLLECTOR CURRENT : I C (mA) Fig.4 DC current gain vs. collector current ( Ι ) DC CURRENT GAIN : h FE Ta=25°C V CE = −3V −5V −1000 −2000 20000 10000 2000 1000 500 5000 50000 COLLECTOR CURRENT : I C (mA) Fig.5 DC current gain vs. collector current ( ΙΙ ) DC CURRENT GAIN : h FE V CE = −5V Ta=100 25°C −55°C −1000 −0.1 −0.2 −0.5 −10 −20 COLLECTOR CURRENT : I C (mA) Fig.6 Collector-emitter saturation voltage vs. collector current DC CURRENT GAIN : h FE I C B =500 Ta= −55°C 100°C 25°C 1 2 5 10 20 50 100 200 100 200 500 1000 2000 5000 10000 EMITTER CURRENT : I E (mA) Fig.7 Gain bandwidth product vs. emitter current TRANSISION FREQUWNCY : f T (MHz) V CE Ta=25°C 100 COLLECTOR TO BASE VOLTAGE : V CB (V) Fig.8 Collector output capacitance vs. collector-base voltage OUTPUT CAPACITANCE : Cob (pF) f=1MHz I E =0A Ta=25°C −1 −2 −5 −10 EMITTER TO BASE VOLTAGE : V EB (V) Fig.9 Emitter input capacitance vs. emitter-base voltage EMITTER INPUT CAPACITANCE : Cib (pF) f=1MHz I E =0A Ta=25°C