2SB850 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB850
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min)
- Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.2V(Max) @IC= -5A
- Wide Area of Safe Operation
- Complement to Type 2SD1117
APPLICATIONS
- Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A IB Base Current-Continuous -2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB850
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.2 V VB E(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 μ A hFE DC Current Gain IC= -2A; VCE= -5V 40 240