2SB849A ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION ·
- With TO-3PFa package
- Complement to type 2SD1110A
- Wide area of safe operation
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -130 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A PC Collector power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -130 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V VBEsat Base-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 40 200 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 340 pF fT Transition frequency IC=-0.2A ; VCE=-5V 14 MHz
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)