2SB849 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION ·
- With TO-3PFa package
- Complement to type 2SD1110
- Wide area of safe operation
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A PC Collector power dissipation T C=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(BR) Collector-emitter breakdown voltage I C=-10mA ;IB=0 -120 V VCEsat Collector-emitter saturation voltage I C=-5A ;IB=-0.5A -2.0 V VBEsat Base-emitter saturation voltage I C=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current V CB=-120V; IE=0 -50 μA IEBO Emitter cut-off current V EB=-6V; IC=0 -50 μA hFE-1 DC current gain I C=-20mA ; VCE=-5V 20 hFE -2 DC current gain I C=-1A ; VCE=-5V 40 200 COB Output capacitance I E=0 ; VCB=-10V;f=1MHz 340 pF fT Transition frequency I C=-0.2A ; VCE=-5V 14 MHz
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)