2SB849 SAVANTIC
Document overview
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- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 DESCRIPTION ·
- With TO-3PN package
- Complement to type 2SD1110
- Wide area of safe operation
APPLICATIONS
- For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
ABSOLUTE MAXIMUM RATINGS (TC=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -7 A PC Collector power dissipation T C=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(BR) Collector-emitter breakdown voltage I C=-10mA ;IB=0 -120 V VCE(sat) Collector-emitter saturation voltage I C=-5A ;IB=-0.5A -2.0 V VBE(sat) Base-emitter saturation voltage I C=-5A ;IB=-0.5A -2.0 V ICBO Collector cut-off current V CB=-120V; IE=0 -50 µA IEBO Emitter cut-off current V EB=-6V; IC=0 -50 µA hFE-1 DC current gain I C=-20mA ; VCE=-5V 20 hFE -2 DC current gain I C=-1A ; VCE=-5V 40 200 COB Output capacitance I E=0 ; VCB=-10V;f=1MHz 340 pF fT Transition frequency I C=-0.2A ; VCE=-5V 14 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB849 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)