2SB817C ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark iscSiliconPNPPowerTransistor 2SB817C
DESCRIPTION
- LowCollectorSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A
- GoodLinearity ofhFE
- High CurrentCapability
- WideArea ofSafeOperation
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforaudiofrequency amplifieroutput stageapplications ABSOLUTEMAXIMUMRATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -160 V VCEO Collector-EmitterVoltage -140 V VEBO Emitter-BaseVoltage -6 V IC CollectorCurrent-Continuous -12 A ICP CollectorCurrent-Pulse -20 A PC CollectorPowerDissipation @TC=25℃ 120 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark iscSiliconPNPPowerTransistor 2SB817C ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-30mA;RBE=∞ -140 V V(BR)CBO Collector-BaseBreakdownVoltage IC=-5mA;IE=0 -160 V V(BR)EBO Emitter-BaseBreakdownVoltage IE=-5mA;IC=0 -6 V VCE(sat) Collector-EmitterSaturationVoltage IC=-5.0A;IB=-0.5A -2.0 V VBE(on) Base-EmitterOnVoltage IC=-5A;VCE=-5V -1.5 V ICBO CollectorCutoffCurrent VCB=-160V;IE=0 -100 μA IEBO EmitterCutoffCurrent VEB=-4V;IC=0 -100 μA hFE-1 DCCurrentGain IC=-1A;VCE=-5V 100 200 hFE-2 DCCurrentGain IC=-5A;VCE=-5V 35 COB OutputCapacitance IE=0;VCB=-10V;ftest=1.0MHz 280 pF fT Current-Gain—BandwidthProduct IC=-1A;VCE=-5V 10 MHz Switchingtimes ton Turn-onTime IC=-10A,RL=10Ω, IB1=-IB2=-5A,VCC=-50V 0.45 μs tstg StorageTime 1.75 μs tf FallTime 0.25 μs