2SB815-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Large current capacity (IC=0.7A) and low-saturation voltage.
  • Complimentary to 2SD1048-HF 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -15 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -700 mA Collector Current - Pulse ICP -1.5 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -20 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -15 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= - 15V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 IC=-5 mA, IB=-0.5mA -15 -35 IC=-100mA, IB=-10mA -60 -120 Base - emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1.2 V VCE= -2V, IC= -50mA 200 600 VCE= -2V, IC= -500mA 80 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 13 pF Transition frequency fT VCE= -10V, IC= -50mA 250 MHz DC current gain Collector-emitter saturation voltage VCE(sat) mV V uA hFE ■ Classification of hfe(1) Type 2SB815-B6-HF 2SB815-B7-HF Range 200-400 300-600 Marking B6 F B7 F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB815-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 10010 2 3 51.0 2 3 5 10002 3 5 2 3 5 10 2 3 51.0 2 3 5 75 7 --100 --200 --300 --400 --500 --600 --700 --800 IB=0 1.0 --50mA--30mA --10mA --2mA --1mA --6mA 100 Base-to-Emitter Voltage, VBE -- V Base Current, IB -- ∝A IB -- VBE 100 1000 101.0 2 3 5 7 1002 3 5 7 100 1000 (For PNP, minus sign is omitted.) VCE=5V VCE=10V VCE=2V f=1MHz (For PNP, minus sign is omitted.) (For PNP, minus sign is omitted.)(For PNP, minus sign is omitted.) Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA IC -- VCE fT -- IC Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Collector-to-Base Voltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF Collector Current, IC -- mA hFE -- IC DC Current Gain, hFE 10010 2 3 51.0 2 3 5 10002 3 5 1000 100 10000 IC / IB=10 (For PNP, minus sign is omitted.) Collector Current, IC -- mA VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV PNP Transistors 2SB815-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics 0 20 40 60 80 100 120 140 150 100 200 250 300 Ambient Temperature, Ta -- bC PC -- Ta Collector Dissipation, PC -- mW PNP Transistors 2SB815-HF