2SB813 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
LJ-^ioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB813
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR,CEO= -60V(Min)
- Good Linearity of I>E
- High Power Dissipation
APPLICATIONS
- Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25t) SYMBOL VGBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -60 -60 150 -55-150 UNIT V V V A A W r FIB: 1 Base > 2 Collector ' ; 3 Emitter 1 ' ' TO-220C package T *
- « B H J_/7<L it* * H ' K r 1 c r ffeD 1 j G •- I I DIM A B C D F G H J K L Q R S U V mm MIN 15,50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10,20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 ^__l » r*- J NJ Sonii-Conductors reserves the right to change test conditions, parameter limits and piicknge dimensions xvithout notice. Information furnished by N.I Semi-Conductors is believed to he both accurate and reliable ;U llie time oCuoii to press. I Itmever, NJ Semi-Conductors iissunies no responsibilit) for any errors or omissions discovered in its use. N.I Seiiii-t'ondiiclors eneoura.ues euslomers to verily that datasheets nre cmrciit before phiciii}.; orders. Qualiry Semi-Conductors
Silicon PNP Power Transistor 2SB813
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) ICEO IEBO HFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -5mA; IB= 0 lc= -1 mA; IE= 0 lE=-1mA; lc=0 lc= -4A; IB- -0.4A VC6= -40V; IB= 0 VEB= -4V; lc= 0 lc= -1A; VCE= -2V lc=-0.1A;VcE=-5V MIN -60 -60 TYP. MAX -1.5 -100 -100 200 UNIT V V V V UA MA MHz