2SB813 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB813
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
- Good Linearity of hFE
- High Power Dissipation
APPLICATIONS
- Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB813
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.5 V ICEO Collector Cutoff Current VCE= -40V; IB= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μ A hFE DC Current Gain IC= -1A; VCE= -2V 60 200 fT Current-Gain—Bandwidth Product IC= -0.1A; VCE= -5V 20 MHz