2SB812 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB812
DESCRIPTION
- With TO-3PN package
- Wide area of safe operation
- Low collector saturation voltage
APPLICATIONS
- For audio frequency output applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -4 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -40~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB812 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA ;IB=0 -60 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ;IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -6 V VCEsat Collector-emitter saturation voltage I C=-3A ;IB=-0.3A -1.5 V VBE Base-emitter on voltage I C=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current V CB=-60V IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-6V; IC=0 -0.1 mA hFE DC current gain I C=-1A ; VCE=-4V 40 250
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB812 PACKAGE OUTLINE Fig.2 outline dimensions