2SB812 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB812
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -60V(Min)
- High Power Dissipation
- Complement to Type 2SD1032
APPLICATIONS
- Designed for AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB812
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -1.5 V VBE(on) Base -Emitter On Voltage IC= -3A; VCE= -4V -2.0 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -700 μA ICES Collector Cutoff Current VCE= -60V; VBE= 0 -400 μA hFE-1 DC Current Gain IC= -1A; VCE= -4V 40 250 hFE-2 DC Current Gain IC= -3A; VCE= -4V 15 Switching times ton Turn-on Time 0.2 μs toff Turn-Off Time IC= -4A, IB1= -IB2= -0.4A 1.4 μs hFE-1 Classifications R Q P 40-90 70-150 120-250 isc Website：www.iscsemi.cn 2