2SB806-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
High collector to emitter voltage: VCEO -120V. www.kexin.com.cn Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V Collector current IC -0.7 A Collector current (pulse) *1 IC(pu) -1.2 A Collector power dissipation Pc 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *1. PW 10ms,duty cycle 50% * PW 350µs,duty cycle 2% ■ Classification of hfe(1)
- = ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ ≤ ≤ ≤ ≤ 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 Type 2SB806-R-HF 2SB806-Q-HF 2SB806-P-HF Range 90-180 135-270 200-400 Marking KR F KQ F KP F Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE= 0 -120 Collector- emitter breakdown voltage VCEO Ic=- 1 mA， IB= 0 -120 Emitter - base breakdown voltage VEBO IE= -100μA， IC= 0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE= 0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage * VCE(sat) IC=-500 mA, IB=-50mA -0.6 Base - emitter saturation voltage * VBE(sat) IC=-500 mA, IB=-50mA -1.5 Base - emitter voltage * VBE VCE= -10V, IC= -10mA -0.55 -0.68 VCE= -1V, IC= -100mA 90 200 400 VCE= -1V, IC= -5mA 45 200 Collector output capacitance Cob VCB= -10V, IE=0,f=1MHz 14 pF Transition frequency fT VCE= -10V, IC= -10mA 75 MHz DC current gain * hFE V uA V
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB806-HF
www.kexin.com.cn ■ Typical Characterisitics PNP Transistors 2SB806-HF
www.kexin.com.cn ■ Typical Characterisitics PNP Transistors 2SB806-HF