2SK801 AITSEMI

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Technical content

AiT Semiconductor Inc. www.ait-ic.com 2SK801 MOSFET SMALL SIGNAL N-CHANNEL 60V , 310mA REV1.0 - JUL 2016 RELEASED - - 1 - DESCRIPTION FEATURES The 2SB801 is available in SOT-23 package  Available in SOT-23 package PIN DESCRIPTION

ORDERING INFORMATION

Note 3,000pcs/Reel AiT provides all RoHS Compliant Products

AiT Semiconductor Inc. www.ait-ic.com 2SK801 MOSFET SMALL SIGNAL N-CHANNEL 60V , 310mA REV1.0 - JUL 2016 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS VDSS, Drain–Source Voltage 60Vdc VDGR, Drain–Gate Voltage (RGS = 1.0 MΩ) 60Vdc Drain Current ID, Continuous TC = 25°CNOTE 1 IDM, Pulse t < 10us 310mAdc 1200mAdc Gate–Source Voltage VGS, Continuous VGSM, Non–repetitive (tp ≤ 50μs) ±20Vdc ±40Vpk Stresses above may cause permanent damage to the device. These are stress rat ings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: The Power Dissipation of the package may result in a lower continuous drain current. NOTE2: FR–5 = 1.0 x 0.75 x 0.062 in. Parameter Symbol Max Unit Total Device Dissipation FR-5 BoardNOTE2 PD TA = 25℃ 225 mW Derate above 25℃ 1.8 mW/℃ Thermal Resistance, Junction to Ambient RθJA 556 ℃/W Total Device Dissipation Alumina SubstrateNOTE3 PD TA = 25°C 300 mW Derate above 25°C 2.4 mW/℃ Thermal Resistance, Junction to Ambient RθJA 417 ℃/W Junction and Storage Temperature TJ, TSTG -55 ~ +150 ℃

AiT Semiconductor Inc. www.ait-ic.com 2SK801 MOSFET SMALL SIGNAL N-CHANNEL 60V , 310mA REV1.0 - JUL 2016 RELEASED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS VGS = 0, ID = 10μAdc 60 - - Vdc Zero Gate Voltage Drain Current TJ = 25°C TJ = 125°C IDSS VGS = 0, VDS = 60Vdc 1.0 500 μAdc Gate–Body Leakage Current, Forward IGSSF VGS = 20Vdc - - 100 nAdc Gate–Body Leakage Current, Reverse IGSSR VGS= –20Vdc - - -100 nAdc ON CHARACTERISTICSNOTE4 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μAdc 1.0 1.8 2.2 Vdc On–State Drain Current ID(on) VDS≥2.0VDS(on), VGS=10Vdc 500 - - mA Static Drain–Source On–State Voltage VDS(on) VGS=10Vdc, ID=500mAdc VGS=5.0Vdc, ID=50mAdc 3.75 0.375 Vdc Static Drain–Source On–State Resistance RDS(on) VGS=10V, ID=500mAdc VGS=5.0Vdc, ID=50mAdc 1.5 1.7 2.5 2.5 Ohms Forward Transconductance gFS VDS≥2.0VDS(on), ID=200mAdc 80 - - mmhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss VDS=25Vdc, VGS=0, f=1.0MHz - 17 50 pF Output Capacitance Coss - 10 25 Reverse Transfer Capacitance Crss - 2.5 5.0 SWITCHING CHARACTERISTICS NOTE4 Turn–On Delay Time td(on) VDD = 25Vdc , ID≌ 500mAdc RG = 25Ω, RL = 50Ω, VGEN = 10V - 7 20 ns Turn–Off Delay Time td(off) - 11 40 BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage VSD IS = 115mAdc, V GS = 0V - - -1.5 Vdc Source Current Continuous IS Body Diode - - -115 mAdc Source Current Pulsed ISM - - -800 mAdc NOTE4: Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.

AiT Semiconductor Inc. www.ait-ic.com 2SK801 MOSFET SMALL SIGNAL N-CHANNEL 60V , 310mA REV1.0 - JUL 2016 RELEASED - - 5 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 0.89 1.11 0.0350 0.0440 D 0.37 0.50 0.0150 0.0200 G 1.78 2.04 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.35 0.69 0.0140 0.0285 L 0.89 1.02 0.0350 0.0401 S 2.10 2.64 0.0830 0.1039 V 0.45 0.60 0.0177 0.0236

AiT Semiconductor Inc. www.ait-ic.com 2SK801 MOSFET SMALL SIGNAL N-CHANNEL 60V , 310mA REV1.0 - JUL 2016 RELEASED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.