2SB800-HF_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors ■ Features
- High Collector to Emitter Voltage:VCEO>-80V
- Complement to 2SD1001-HF ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -300 Collector Current - Pulse (Note.1) ICP -500 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V mA Note.1: PW≦10ms,Duty Cycle≦50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -80 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -80 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-300mA, IB=-30mA -0.3 -0.6 Base - emitter saturation voltage (Note.1) VBE(sat) IC=-300mA, IB=-30mA -0.9 -1.2 Base - emitter voltage (Note.1) VBE VCE= -6V, IC= -10mA -600 -660 -700 VCE= -1V, IC= -50mA 90 200 400 VCE= -2V, IC= -300mA 30 80 Collector output capacitance Cob VCB= -6V, IE= 0,f=1MHz 13 pF Transition frequency fT VCE= -6V, IE= 10mA 100 MHz V uA DC current gain (Note.1) hFE V Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SB800-M-HF 2SB800-L-HF 2SB800-K-HF Range 90-180 135-270 200-400 Marking FM F FL F FK F mV 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB800-HF
www.kexin.com.cn2 Transistors ■ Typical Characterisitics PNP Transistors 2SB800-HF
www.kexin.com.cn 3 Transistors ■ Typical Characterisitics PNP Transistors 2SB800-HF