2SB799_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Transistors PNP Transistors 2SB799 ■ Features
- Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -500mA, IB = -50mA )
- Complement to 2SD1000 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.7 Collector Current - Pulse (Note.1) ICP -1 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW≦10ms,Duty Cycle≦50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-500mA, IB=-50mA -0.16 -0.4 Base - emitter saturation voltage (Note.1) VBE(sat) IC=-500mA, IB=-50mA -0.9 -1.2 Base - emitter voltage (Note.1) VBE VCE= -6V, IC= -10mA -600 -630 -700 VCE= -1V, IC= -100mA 90 200 400 VCE= -1V, IC= -500mA 50 120 Collector output capacitance Cob VCB= -6V, IE= 0 mA,f=1MHz 25 pF Transition frequency fT VCE= -6V, IE= 10mA 120 MHz V uA DC current gain (Note.1) hFE V Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SB799-M 2SB799-L 2SB799-K Range 90-180 135-270 200-400 Marking MM ML MK mV
www.kexin.com.cn2 Transistors PNP Transistors 2SB799 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SB799 ■ Typical Characterisitics