2SB798-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA )
  • Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector Current - Pulse (Note.1) ICP -1.5 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1: PW≦10ms,Duty Cycle≦50% ■ Electrical Characteristics Ta = 25℃ Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SB798-M-HF 2SB798-L-HF 2SB798-K-HF Range 90-180 135-270 200-400 Marking DM F DL F DK F Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -25 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -30 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-100mA -0.25 -0.4 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-100mA -1 -1.2 Base - emitter voltage VBE VCE= -6V, IC= -10mA -600 -640 -700 mV VCE= -1V, IC= -100mA 90 200 400 VCE= -1V, IC= -1A 50 100 Collector output capacitance Cob VCB= -6V, IE= 10mA,f=1MHz 36 pF Transition frequency fT VCE= -6V, IC= -10mA 110 MHz V uA V DC current gain hFE 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB798-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0 100 1.0 Collector Dissipation vs. Ambient Temperature 150 0.5 50 200 2500 1.5 2.0 2.5 -0.4 -0.6 -20 Collector Current vs. Base to Emitter Voltage -0.7 -10 -50 -0.5 -0.8 -0.9-1 -100 -200 -500 -1000 Base to Emitter Voltage, VBE (V) -1.0 When mounted on a ceramic substrate of 16cm2 *0.7mm VCE=-0.6V PULSDE Collector Current, IC (mA) Collector Current, IC (mA) -1 -5 DC Current Gain vs.Collector Current DC Current Gain, hFE -10 -2 -20-50 100 200 Collector Current, IC (A) -100-200 500 1000 -500-1-2 -5 -0.05 Collector and Base Saturation Voltage vs. Collector Current Base Saturation Voltage, VBE(sat) (V) Collector Saturation Voltage, VCE(sat) (V) -0.02 -0.01 -0.1 -0.2 Collector Current, IC (A) -0.5 -10 VCE=1.0V PULSED IC=10*IB VBE(sat) VCE(sat) ¥ ¥ PNP Transistors 2SB798-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics 1 5 Gain Bandwidth Product vs. Emitter Current Gain Bandwidth Product, fT (MHz) 2 2010 100 200 Emitter Current, IE (mA) 500 1000 50100 2005001000 -0.1 -0.5 Output Capacitance vs. Collector to Base Voltage Output Capacitance, Cob (pF) -0.2 -21 Collector to Base Voltage, VCB (V) 100 -5 -10 -20 -50-100 VCE=-1.0V VCE=-6.0V IE=0 f=1.0MHz PNP Transistors 2SB798-HF