2SB792A_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB792A ■ Features

  • High collector to emitter voltage VCEO.
  • Low noise voltage NV
  • Complimentary to 2SD814A 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -185 Collector - Emitter Voltage VCEO -185 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 Collector Current - Pulse ICP -100 Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -185 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -185 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -1 Emitter cut-off current IEBO VEB= -4V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-30m A, IB=-3mA -1 Base - emitter saturation voltage VBE(sat) IC=-30m A, IB=-3mA -1.2 DC current gain hFE VCE= -5V, IC= -10mA 130 330 Noise voltage NV VCE = –10V, IC = –1mA, GV =80dB, Rg = 100kΩ, Function = FLAT 150 mV Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 4 pF Transition frequency fT VCE= -10V, IE= 10mA,f=200MHz 200 MHz V uA V ■ Classification of hfe Type 2SB792A-R 2SB792A-S Range 130-220 185-330 Marking 2FR 2FS

www.kexin.com.cn2 Transistors PNP Transistors 2SB792A ■ Typical Characterisitics 0610 40 12080 14020 10060 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW) –100 –80 –60 –40 –20 –90 –70 –50 –30 –10 Ta=25˚C –2mA –1mA –3mA –4mA –5mA –6mA –7mA –8mA –9mA IB=–10mA Collector to emitter voltage VCE (V) Collector current IC (mA) –120 –100 –80 –60 –40 –20 VCE=–5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE=–5V Ta=75˚C 25˚C –25˚C Collector current IC (mA) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 250 200 150 100 225 175 125 VCB=–10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC IaT — C — VCE IC — VBE VCE(sat) — I C hFE — I C fT — I E Cob — VCB