2SB792 PANASONIC
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Technical content
2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD814 n Features l High collector to emitter voltage VCEO . l Low noise voltage NV . l Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.950.95 1.9–0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.10.8 0.4–0.2 0 to 0.1 0.16 +0.1 –0.06 1.45 0.1 to 0.3 2.9 +0.2 –0.05 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –150 –185 –150 –185 –100 –50 200 150 –55 ~ +150 Unit V V V mA mA mW 2SB792 2SB792A 2SB792 2SB792A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage Symbol I CBO V CEO V EBO hFE * V CE(sat) fT C ob NV Conditions V CB = –100V , IE = 0 IC = –100mA, IB = 0 IE = –10mA, IC = 0 V CE = –5V , IC = –10mA IC = –30mA, IB = –3mA V CB = –10V , IE = 10mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz V CE = –10V , IC = –1mA, GV = 80dB, R g = 100kW , Function = FLAT min –150 –185 130 130 typ 200 150 max 450 330 Unit mA V V V MHz pF mV Marking symbol :I(2SB792) 2F(2SB792A) *hFE Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 2SB792 IR IS IT 2SB792A 2FR 2FS — Marking Symbol 2SB792 2SB792A 2SB792 2SB792A
Transistor 2SB792, SB792A 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –100 –80 –60 –40 –20 –90 –70 –50 –30 –10 Ta=25˚C –2mA –1mA –3mA –4mA –5mA –6mA –7mA –8mA –9mA IB=–10mA Collector to emitter voltage VCE (V) Collector current IC (mA ) –120 –100 –80 –60 –40 –20 VCE =–5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 600 500 400 300 200 100 VCE =–5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 0.1 1 10 1000.3 3 30 250 200 150 100 225 175 125 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB