2SB792 KEXIN
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Technical content
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High collector-emitter voltage VCEO Low noise voltage NV Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage 2SB792 -150 V 2SB792A -185 V Collector-emitter voltage 2SB792 -150 V 2SB792A -185 V Emitter-base voltage V EBO -5 V Collector current I C -50 mA Peak collector current I CP -100 mA Collector power dissipation P C 200 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 VCBO VCEO hFE Classification 2SB792 IR IS IT 2SB792A 2FR 2FS RST 130 220 185 330 260 450 Marking Rank hFE Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter voltage 2SB792 -150 V 2SB792A -185 V Emitter-base voltage V EBO IE =- 1 0ì A ,IC =0 - 5 V Collector-base cutoff current I CBO VCB = -100 V, IE =0 - 1 ì A Forward current transfer ratio 2SB792 130 450 2SB792A 130 330 Collector-emitter saturation voltage V CE(sat) IC =- 3 0m A ,IB =- 3m A - 1 V Transition frequency f T VCE =- 1 0V ,IC = -10 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB =- 1 0V ,IE =0 ,f=1M H z 4 p F Noise voltage NV VCE =- 1 0V ,IC =- 1m A ,GV =8 0d B Rg = 100KÙ, Function = FLAT 150 mV VCEO IC = -100 ìA, IB =0 hFE VCE =- 5V ,IC =- 1 0m A