2SB772-126_15 KEXIN

Document overview

1www.kexin.com.cn PNP Transistors ■ Features

PNP transistor High current output up to 3A
Low Saturation Voltage
Complement to 2SD882 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -30 V Emitter to Base Voltage VEBO -6 V Collector Current to Continuous IC -3 A Collector Dissipation Pc 1 W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector-base breakdown voltage VCBO Ic=-100uA ,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage VEBO IE= -100 uA ,IC=0 -6 V Collector cut-off current ICBO VCB=-40 V , IE=0 -1 μA Emitter cut-off current IEBO VEB=-6V , IC=0 -1 μA VCE= -2V, IC= -1A 60 400 VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=- 0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency f T VCE=-5 V, IC=-0.1mA,f = 10MHz 50 MHz DC current gain hFE 2SB772 ■ Classification of hfe(1) Type 2SB772-R 2SB772-Q 2SB772-P 2SB772-E Range 60-120 100-200 160-320 200-400 ø3.20± 0.10 0.75± 0.10 0.75± 0.10 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 1.60± 0.10 11.00± 0.20 3.9±0 0.10 14.20MAX 16.10± 0.20 13.06± 0.30 1.75± 0.20 (0.50)(1.00) 0.50 +0.10 –0.05 TO-126 3. Emitter 1. Base 2. Collector Unit:mm 1 2 3

2 www.kexin.com.cn 2SB772 Typical Characteristics

SMD TypeDIP Type Transistors 3www.kexin.com.cn 2SB772 ■ Typical Characterisitics