2SB768_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB768 ■ Features

  • High voltage:VCEO=-150V
  • Complimentary to 2SD1033. 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm

1 Base

2 Collector

3 Emitter

■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -200 Collector - Emitter Voltage VCEO -150 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -2 Collector Current - Pulse (Note.1) ICP -3 Collector Power Dissipation PC 2 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A Note.1:PW ≤10 ms,Duty Cycle≤50%. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -200 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -150 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -150 V , IE=0 -50 Emitter cut-off current IEBO VEB= -4V , IC=0 -50 Collector-emitter saturation voltage (Note.1) VCE(sat) IC=-500 mA, IB=-50mA -0.15 -1 Base - emitter saturation voltage (Note.1) VBE(sat) IC=-500 mA, IB=-50mA -1.2 DC current gain (Note.1) hFE VCE= -10V, IC= -400mA 40 80 200 Transition frequency fT VCE= -10V, IE= 0.4mA 10 MHz V uA V Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe Type 2SB768-M 2SB768-L 2SB768-K Range 40-80 60-120 100-200

www.kexin.com.cn2 Transistors PNP Transistors 2SB768 ■ Typical Characterisitics