2SB766-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors ■ Features

  • Large collector power dissipation PC
  • Complimentary to 2SD874-HF 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -2 mA， IB=0 -25 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB=-50mA -0.2 -0.4 Base - emitter saturation voltage VBE(sat) IC=-500 mA, IB=-50mA -0.85 -1.2 hFE(1) VCE= -10V, IC= -500mA 85 340 hFE(2) VCE=- 5V, IC= -1A 50 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 20 30 pF Transition frequency fT VCE= -10V, IC= -50mA,f=200MHz 200 MHz DC current gain V nA V ■ Classification of hfe(1) Type 2SB766-Q-HF 2SB766-R-HF 2SB766-S-HF Range 85-170 120-240 170-340 Marking AQ F AR F AS F Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector Current - Pulse ICP -1.5 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SB766-HF

www.kexin.com.cn2 Transistors ■ Typical Characterisitics 0610 40 12080 14020 10060 1.4 1.2 0.4 1.0 0.8 0.2 0.6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W) –1.50 –1.25 –1.00 – 0.75 – 0.50 – 0.25 Ta=25˚C IB=–10mA –1mA –2mA –3mA –4mA –5mA –6mA –7mA –8mA –9mA Collector to emitter voltage VCE (V) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 –25˚C Ta=75˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC/IB=10 Ta=–25˚C 75˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 600 500 400 300 200 100 VCE=–10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB=–10V Ta=25˚C Emitter current IE (mA) Transition frequency fT (MHz) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 Single pulse Ta=25˚C t=10ms t=1s ICP IC 2SB766 Collector to emitter voltage VCE (V) Collector current IC (A) PC IaT — C — VCE VCE(sat) — I C VBE(sat) — I C hFE — I C fT — I E Cob — VCB Area of safe operation (ASO) PNP Transistors 2SB766-HF