2SB760 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB760
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
- Good Linearity of hFE
- Wide Area of Safe Operation
- Complement to Type 2SD855
APPLICATIONS
- Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25r) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -60 -60 150 -55-150 UNIT V V V A A W , ^.. 2 w FIH: 1 Base i 2 Collector ^ 3 Emitter ^ 2 TO-220C packaee i MQ U 1 . * " A * t , B » 5~GT c * H J \\ H P&08 G [*- c | DIIV A B C D F G H J K L Q R s U V x~l L D ... mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13. 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 — j ^ * J R|* vf. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate und reliable at the time of going to press. I loucvcr. NJ Semi-Coiulnctors assumes no re-sponsihilits for any errors or omissions discovered in its use. N.I Semi-Conductors encourage-; customers to \\erify that datasheets are current before placing orders. Quality 5emi-Conductors
Silicon PNP Power Transistor 2SB760
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(on) ICEO IEBO hpE-1 hFE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -30mA; IB= 0 |C=-1A; IB=-0.125A lc= -1A; VCE= -4V VCE= -60V; IB= 0 VEB= -5V; lc= 0 lc= -0.2A; VCE= -4V. lc= -1A; VCE= -4V MIN -60 TYP. MAX -1.0 -1.3 -300 250 UNIT V V V UA mA
- hpE-1 Classifications R 40-90 Q 70-150 P 120-250