2SB760 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB760
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V (BR)CEO= -60V(Min)
- Good Linearity of hFE
- Wide Area of Safe Operation
- Complement to Type 2SD855
APPLICATIONS
- Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB760
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A B -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.3 V ICEO Collector Cutoff Current VCE= -60V; IB= 0 B -300 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain IC= -0.2A; VCE= -4V 40 250 hFE-2 DC Current Gain IC= -1A; VCE= -4V 15 hFE-1 Classifications R Q P 40-90 70-150 120-250 isc Website：www.iscsemi.cn 2