2SB760 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB760
DESCRIPTION
- With TO-220 package
- Low collector saturation voltage
- Complement to type 2SD855
APPLICATIONS
- For audio frequency and radio frequency power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector- emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1 A PC Collector power dissipation T C=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-220) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB760 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-10mA IB=0 -60 V V(BR)CBO Collector-base breakdown voltage I C=-1mA; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-1A; IB=-0.1A -1.0 V VBEsat Base-emitter saturation voltage I C=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current V CB=-60V; IE=0 -100 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -100 µA hFE DC current gain I C=-0.2A ; VCE=-4V 40 450
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB760 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)