2SB731 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB731 DESCRIPTION ·
- With TO-126 package
- Complement to type 2SD809
- Low collector saturation voltage
APPLICATIONS
- Audio frequency power amplifier
- Low speed switching PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -1 A ICM Collector current-Peak -2 A IB B Base current (DC) -0.5 A Ta=25℃ 1.0 PT Total power dissipation TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB731 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-1.0A; IB=-50mA -0.5 -0.6 V VBEsat Base-emitter saturation voltage IC=-1.0A; IB=-50mA -1.0 -1.2 V ICBO Collector cut-off current VCB=-50V; IE=0 -0.1 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 135 600 hFE-2 DC current gain IC=-1A ; VCE=-1V 40 fT Transition frequency IC=-10mA ; VCE=-2V 75 MHz COB Collector output capacitance IE=0; f=1MHz ; VCB=-10V 25 pF hFE-1 Classifications L K F E 135-270 200-400 300-480 360-600
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB731 PACKAGE OUTLINE Fig.2 Outline dimensions