2SB710A_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB710A ■ Features

  • Large collector current IC
  • Complimentary to 2SD602A. 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector current - Pulse ICP -1 A Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= - 50V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-300 mA, IB=-30mA -0.35 -0.6 Base - emitter saturation voltage VBE(sat) IC=-300 mA, IB=-30mA -1.1 -1.5 VCE= -10V, IC= -150mA 85 340 VCE= -10V, IC= -500mA 40 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 6 15 pF Transition frequency fT VCE= -10V, IE= 50mA,f=200MHz 200 MHz V uA V DC current gain hFE ■ Classification of hfe(1) Type 2SB710A- Q 2SB710A- R 2SB710A- S Range 85-170 120-240 170-340 Marking DQ DR DS

www.kexin.com.cn2 Transistors PNP Transistors 2SB710A ■ Typical Characterisitics VCE(sat) - IC VBE(sat) IC hFE IC PC - Ta IC VCE IC IB fT IE Cob VCB VCER RBE 0610 40 12080 240 200 160 120 Ambient temperature Ta (°C) Collector power dissipation PC (mW) −1 200 −1 000 −800 −600 −400 −200 −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA IB = −10 mA Collector-emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C −800 −700 −600 −500 −400 −300 −200 −100 Base current IB (mA) Collector current IC (mA) VCE = −10 V Ta = 25°C − 0.001 − 0.01 − 0.1 −10 −10 −100 −1 000 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 25°C −25°C Ta=75°C − 0.1 −10 −100 −10 −100 −1 000 Ta = −25°C 25°C 75°C Base-emitter saturation voltage VBE(sat) (V) Collector current I C(mA) IC / IB = 10 − 0.01 0 600 500 400 300 200 100 −1 −10 Forward current transfer ratio hFE VCE = −10 V − 0.01 − 0.1 Collector current IC (A) Ta = 75°C 25°C −25°C 240 200 160 120 1 10 100 Transition frequency fT (MHz) Emitter current IE (mA) VCB = −10 V Ta = 25°C −10 −100 Collector-base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) 1 10 100 1 000 −120 −100 −80 −60 −40 −20 Base-emitter resistance RBE (kΩ) IC = −2 mA Ta = 25°C 2SB0710A Collector-emitter voltage (Resistor between B and E) VCER (V)