2SB710 PANASONIC
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Technical content
1Publication date: May 2003 SJC00048CED 2SB0710 (2SB710), 2SB0710A (2SB710A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A) ■ Features
- Large collector current IC
- Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing ■ Absolute Maximum Ratings Ta = 25°C ■ Electrical Characteristics Ta = 25°C ± 3°C 0.40+0.10 –0.05 (0.65) 1.50+0.25 –0.05 2.8+0.2 –0.3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 0.16+0.10 –0.06 0.4±0.2 10˚ 0 to 0.1 1.1+0.2 –0.1 1.1+0.3 –0.1 Parameter Symbol Rating Unit Collector-base voltage 2SB0710 V CBO −30 V (Emitter open) 2SB0710A −60 Collector-emitter voltage 2SB0710 V CEO −25 V (Base open) 2SB0710A −50 Emitter-base voltage (Collector open) V EBO −5V Collector current I C − 0.5 A Peak collector current I CP −1A Collector power dissipation P C 200 mW Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Unit: mm 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage 2SB0710 V CBO IC = −10 µA, IE = 0 −30 V (Emitter open) 2SB0710A −60 Collector-emitter voltage 2SB0710 V CEO IC = −10 mA, IB = 0 −25 V (Base open) 2SB0710A −50 Emitter-base voltage (Collector open) V EBO IE = −10 µA, IC = 0 −5V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −150 mA 85 340 hFE2 VCE = −10 V, IC = −500 mA 40 Collector-emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.60 V Base-emitter saturation voltage *1 VBE(sat) IC = −300 mA, IB = −30 mA −1.1 −1.5 V Transition frequency f T VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz Collector output capacitance C ob VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF (Common base, input open circuited) Marking Symbol:
- 2SB0710: C
- 2SB0710A: D Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Marking 2SB0710 CQ CR CS C symbol 2SB0710A DQ DR DS D Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Product of no-rank is not classified and have no marking symbol for rank.
2SB0710, 2SB0710A
2 SJC00048CED
VCE(sat) IC VBE(sat) IC hFE IC PC Ta IC VCE IC IB fT IE Cob VCB VCER RBE 0 160 40 120 80 240 200 160 120 Ambient temperature Ta (°C) Collector power dissipation PC (mW) −1 200 −1 000 −800 −600 −400 −200 −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA IB = −10 mA Collector-emitter voltage VCE (V) Collector current IC (mA) Ta = 25°C −800 −700 −600 −500 −400 −300 −200 −100 Base current IB (mA) Collector current IC (mA) VCE = −10 V Ta = 25°C − 0.001 − 0.01 − 0.1 −10 −10 −100 −1 000 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) IC / IB = 10 25°C −25°C Ta=75°C − 0.1 −10 −100 −10 −100 −1 000 Ta = −25°C 25°C 75°C Base-emitter saturation voltage VBE(sat) (V) Collector current IC (mA) IC / IB = 10 − 0.01 0 600 500 400 300 200 100 −1 −10 Forward current transfer ratio hFE VCE = −10 V − 0.01 − 0.1 Collector current IC (A) Ta = 75°C 25°C −25°C 240 200 160 120 1 10 100 Transition frequency fT (MHz) Emitter current IE (mA) VCB = −10 V Ta = 25°C −10 −100 Collector-base voltage VCB (V) IE = 0 f = 1 MHz Ta = 25°C Collector output capacitance (Common base, input open circuited) Cob (pF) 1 10 100 1 000 −120 −100 −80 −60 −40 −20 Base-emitter resistance RBE (kΩ) IC = −2 mA Ta = 25°C 2SB0710A 2SB0710 Collector-emitter voltage (Resistor between B and E) VCER (V)
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