2SB709A_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Transistors PNP Transistors 2SB709A ■ Features

  • For general amplification
  • Complimentary to 2SD601A. 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -45 Collector- emitter breakdown voltage VCEO Ic= -2 mA， IB=0 -45 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Collector-Emitter cut-off current ICEO VCE= -20 V , IB=0 -100 Emitter cut-off current IEBO VEB= -6V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA -1.2 DC current gain hFE VCE= -10V, IC= -2mA 160 460 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 2.7 pF Transition frequency fT VCE= -10V, IC= -1mA,f=200MHz 60 MHz V uA V ■ Classification of hfe Type 2SB709A- Q 2SB709A- R 2SB709A- S Range 160-260 210-340 290-460 Marking BQ1 BR1 BS1

www.kexin.com.cn2 Transistors PNP Transistors 2SB709A ■ Typical Characterisitics -0.1 -1 -10 100 -1 -10 -100 100 150 200 250 -0.1 -1 -10 -100 100 200 300 400 500 600 0 25 50 75 100 125 150 100 150 200 250 -0 -5 -10 -15 -1 -10 -100 -50 -100 -150 -200 f=1MHz IE=0 / IC=0 Ta=25 o C REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBCob / Cib — — Cib Cob -20 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=-10V Ta=25 o C IC fT — — VCE= -10V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE — — COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta COMMON EMITTER Ta=25℃ -3.0uA -2.7uA -2.4uA -21uA -18uA -15uA -12uA -9uA -6uA IB=-3uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic β=10 Ta=25℃ Ta=100℃ β=10 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VCEsat —— IC