2SB696 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
IE.IS.S.U , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors 2SB696
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo=-120V(Min)
- High Current Capability
- Wide Area of Safe Operation
- Complement to Type 2SD732
APPLICATIONS
- Designed for AF power amplifier applications.
- Recommended for output stage of 60W power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25X:) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Peak Collector Power Dissipation @TC=25-C Junction Temperature Storage Temperature VALUE -150 -120 -12 150 -40-150 UNIT V V V A A W 3 PIN l.Base J '.Emitter 1 L 3.Colle5tor(c3se) \\- 3 Package t v-. — . . A MI « A » p~N~*i 1 i 1 1 I -JU-DJPL _ u — » xrl^x, / St^S— ^ Vs^^/" H3H linn DIM MIN MA A 3900 B 2530 26 C 7.80 8, D 0.50 1 E f .40 1 . G 10.92 H 546 K ILiD 13. L 1675 17. N 1940 19 0 400 4 U 30.0? 30 V 4.30 4 C t _i t G B ~f i SO N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. I louever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistors 2SB696
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(on) ICBO IEBO hFE fr PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc= -5mA; RBE= °° lc= -50mA; RBE= °° lc= -5mA; IE= 0 IE= -5mA; lc= 0 lc= -5A; IB= -0.5A lc= -1A; VCE= -5V Vcs= -80V; IE= 0 • VEB= -4V; lc= 0 lc= -1A; VCE= -5V lc= -1A; VCE= -5V MIN -120 -120 -150 TYP. -0.6 MAX -1.5 -0.1 -0.1 320 UNIT V V V V V V mA mA MHz hFE Classifications c 40-80 D 60-120 E 100-200 F 160-320