2SB695 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
^^mi-donductot , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB695
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -120V(Min)
- Good Linearity of hFE
- Wide Area of Safe Operation
- Complement to Type 2SD731
APPLICATIONS
- Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -170 -120 150 -55-150 UNIT V V V A W r 1 2 3 PIN: l.Base 2.Collector 3. Emitter » C DIM A B C D E F G H J K L N Q R S u Y mm MIN 19.60 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 19.80 1,90 10.89 4.90 3.35 1.995 5.90 9,90 MAX 20.30 15.70 4.90 1.10 2.10 3.60 3.20 3.40 0.605 20.70 2.20 10.91 5.10 3.45 2.100 6.20 10,10 N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing lo press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.' N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB695
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VeE(on) ICBO IEBO hpE-1 hFE-2 COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc=-1mA; IE=0 |E=-1mA; lc=0 lc= -5A; IB= -0.5A lc= -1A; VCE= -5V VCB=-170V; IE=0 VEB= -5V; lc=0 lc= -1A; VCE= -5V lc= -5A; VCE= -5V IE=0; VCB= -10V; ftest= 1 .0MHz lc=-1A; VCE= -5V MIN -120 -170 TYP. 350 MAX -1.5 -1.5 -50 -50 200 UNIT V V V V V u A V A PF MHz