2SB692 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
Ie.i5.zu ^^mi-Conductor Lpioducti, Ona. Cx t/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB692
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)cEo=-100V(Min)
- Good Linearity of hFE
- Wide Area of Safe Operation
- Complement to Type 2SD728
APPLICATIONS
- Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VGBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ Tc=25i: Junction Temperature Storage Temperature Range VALUE -150 -100 150 -55-150 UNIT V V V A W t .4,. . Jl t t -»*4 , | - -) .. • DIM A a c D E r G H J K L N Q R s u Y mm MIN 19.60 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 19.80 1,90 1089 4,90 3.35 1.995 5.90 9.90 MAX 20.30 15.70 4.90 1.10 2.10 3.60 3,20 3.40 0.605 20,70 2.20 10.91 5.10 3.45 2.100 6.20 10.10 G * "— L NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. I lowcvcr, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-C'oiuluctors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB692
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VcE(sat) VBE(on) IGBO IEBO hpE-1 hfE-2 COB fi PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; IB= 0 lc=^1mA; IE=0 lE=-1mA; lc=0 lc= -4A; IB= -0.4A lc= -1A; VCE= -5V Vce=-150V; IE=0 VEB= -5V; lc=0 lc= -1A; VCE= -5V lc= -4A; VCE= -5V I6=0; VCB= -10V; ftest= 1.0MHz lc=-1A; VCE= -5V MIN -100 -150 TYP. 300 MAX -1.5 -1.5 -100 -100 200 UNIT V V V V V MA MA pF MHz