2SB692 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB692
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)
- Good Linearity of hFE
- Wide Area of Safe Operation
- Complement to Type 2SD728
APPLICATIONS
- Designed for low frequency power amplifier and power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB692
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.5 V VBE(on) Base -Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -150V; IE=0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 μ A hFE-1 DC Current Gain IC= -1A; VCE= -5V 40 200 hFE-2 DC Current Gain IC= -4A; VCE= -5V 20 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 300 pF fT Current-Gain—Bandwidth Product IC=-1A; VCE= -5V 7 MHz