2SB691 SAVANTIC
Document overview
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Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB691 DESCRIPTION · With TO-3PN package
- Wide area of safe operation
APPLICATIONS
- For low frequency power amplifier and power switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A PC Collector power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3PN) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB691 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-30mA ;IB=0 -80 V V(BR)CBO Collector-base breakdown voltage I C=-1mA ;IE=0 -130 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-3A; IB=-0.3A -1.5 V VBE Base-emitter on voltage I C=-1A;VCE=-5V -1.5 V ICBO Collector cut-off current V CB=-130V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-5V 40 200 hFE-2 DC current gain I C=-3A ; VCE=-5V 20 fT Transition frequency I C=-1A ; VCE=-5V 7 MHz
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB691 PACKAGE OUTLINE Fig.2 outline dimensions