2SB690 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB690
DESCRIPTION
- Collector-Emitter Breakdown Voltage- :V(BR)CEO=-80V(Min)
- High Power Dissipation
- Complement to Type 2SD726
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -100 -80 150 -45-150 UNIT V V V A A W i ^. \\'\\ PIM: 1 Base 1 2 Collector ^ ' 3 Eaitter 1 ' 3 TO-220C package ? t" A » JL - B M j_rr^'[ .t> r H | , K f 1 C It G (*- DIN A B C D F G H J K L R S u V J mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4,50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 — . NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Concluctors is believed to be both accurate and reliable at the time of going to press. I lowcver, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB690
ELECTRICAL CHARACTERISTICS
10=25^ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VcE(sat) VBE(OR) ICBO hpE-1 hFE-2 Cos fr PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Collector Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -30mA; RBE= °° lE=-10u A; lc=0 lc= -2A; IB= -0.2A lc= -1A; VCE= -5V VCB= -80V; IE= 0 |c= -1A; VCE= -5V IC=-0.1A;VCE=-5V le= 0; VCB= -20V; f= 1MHz lc= -0.5A; VCE= -5V MIN -80 TYP. MAX -2.0 -1.5 -0.1 200 UNIT V V V V mA pF MHz
- hFE -1 Classifications B 60-120 C 100-200