2SB690 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB690
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO = -80V(Min)
- High Power Dissipation
- Complement to Type 2SD726
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB690
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞ -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μ A; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -2.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-2 DC Current Gain IC= -0.1A; VCE= -5V 35 COB Collector Output Capacitance IE= 0; VCB= -20V; f= 1MHz 75 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 20 MHz hFE-1 Classifications B C 60-120 100-200