2SB682 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

JEIIZU ^£.mi-L.onaiictoi L/^roauati, Una. <_X c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB682

DESCRIPTION

  • Collector-Emitter Breakdown Voltage- :V(BR)cEo=-100V(Min)
  • High Power Dissipation
  • Wide Area of Safe Operation

APPLICATIONS

  • Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Power Dissipation @ Ta=25'C Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -100 -100 1.5 150 -40-150 UNIT V V V A W DC . /•".„ 2 FIM: 1 Base ' i 2 Collector ; ' 3 Emitter L 3 TO-220C package MQ A f t
  • * B M l-£f\\. ' \\ K T H c ft: G [*- I J DM A B C D F G H J K L Q S u V mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.30 2.90 2.70 1.35 6.65 8.86 — t -L-J NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of aoina lo press. I lovvever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verity thai datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SB682

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VcE(sat) VBE(OII) ICBO ICEO IEBO hpE-1 hpE-2 COB fy PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -10mA; RBE= °° IE= -5mA; lc= 0 lc= -3A; IB= -0.3A lc= -3A; VCE= -5V VOB=-100V; IE=0 VCE=-100V; RBE= °° VEB= -4V; lc= 0 lc= -0.5A; VCE= -5V lc= -3A; VCE= -5V lE=0;VCB=-10V;f=1MHz lc=-0.5A;VCE=-10V MIN -100 TYP. MAX -1.7 -1.5 -30 -0.1 -0.1 300 UNIT V V V V UA mA mA PF MHz

  • hFE-i Classifications c 55-110 D 90-180 E 150-300