2SB682 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SB682
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min)
- High Power Dissipation
- Wide Area of Safe Operation
APPLICATIONS
- Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A PC Total Power Dissipation @ Ta=25℃ 1.5 W Total Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB682
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.7 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -30 μ A ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -0.5A; VCE= -5V 55 300 hFE-2 DC Current Gain IC= -3A; VCE= -5V 15 COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 75 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 8 MHz hFE-1 Classifications C D E 55-110 90-180 150-300