2SB681 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
JEIIZU <^>£.m.L-<Lonductoi U^ioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB681
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage- :V(BR)CEo=-150V(Min.)
APPLICATIONS
- For AF power amplifier use.
- Recommended for use in output stage of 80 watts power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) SYMBOL VCBO VCEO VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25-C Junction Temperature Storage Temperature VALUE -150 -150 -12 100 150 -55-150 UNIT V V V A W r PIN l.Base 2. Emitter 3.Collestor(case) J L CKM A B c D G H K L N q u v nun MIN MAX i_ 39.00 25.30 7.80 0.90 1.40 26.67 8.50 1 10 1.60 L 10.92 546 11.JO 1675 1940 4,00 30.00 4.30 1350 1705 19.62 420 3020 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. I louever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SB681
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VcE(sat) ICEO IEBO hpE-1 hFE-2 fr PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS lc=-30mA;lB=0 lE=-1mA;lc=0 lc= -6A; IB= -0.6A VGE=-120V; IB=0 VEB= -5V; lc= 0 lc=-1A;VCE=-5V lc= -5A ; VCE= -5V lc=-1A;VCE=-5V MIN -150 TYP. MAX -2.5 -0.1 -0.1 140 UNIT V V V mA mA MHz