2SB681 SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB681
DESCRIPTION
- With TO-3 package
- High power dissipation
APPLICATIONS
- Power amplifier applications
- Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current-peak -20 A PC Collector power dissipation T C=25 100 W Tj Junction temperature 150 Tstg Storage temperature -40~150 Fig.1 simplified outline (TO-3) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB681 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-30mA ;IB=0 -150 V V(BR)CBO Collector-emitter breakdown voltage I C=-1mA ;IE=0 -150 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-6A; IB=-0.6A -2.5 V VBE Base-emitter on voltage I C=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current V CB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE-1 DC current gain I C=-1A ; VCE=-5V 40 140 hFE-2 DC current gain I C=-5A ; VCE=-5V 20 fT Transition frequency I C=-1A ; VCE=-5V 13 MHz hFE-1 Classifications R O 40-80 70-140
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB681 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)