2SB681 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB681
DESCRIPTION
- High Current Capability
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.)
APPLICATIONS
- For AF power amplifier use.
- Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -12 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB681
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 B -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A B -2.5 V ICEO Collector Cutoff Current VCE= -120V; IB= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A ; VCE= -5V 40 140 hFE-2 DC Current Gain IC= -5A ; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -1A ; VCE= -5V 13 MHz isc Website：www.iscsemi.cn