2SB675 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB675
DESCRIPTION
- With TO-220C package
- DARLINGTON
- High DC current gain
- Low collector saturation voltage
- Complement to type 2SD635
APPLICATIONS
- High power switching applications
- Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -7 A IB B Base current -0.2 A PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB675 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA, IB=0 -60 V VCEsat-1 Collector-emitter saturation voltage IC=-3A ,IB=-6mA B -0.95 -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-7A ,IB=-14mA B -1.3 -2.0 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-6mA B -1.55 -2.5 V ICBO Collector cut-off current VCB=-60V, IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -4.0 mA hFE-1 DC current gain IC=-3A ; VCE=-3V 2000 15000 hFE-2 DC current gain IC=-7A ; VCE=-3V 1000 Switching times ton Turn-on time 0.8 μs tstg Storage time 2.0 μs tf Fall time IB1=-IB2=-6mA VCC=-45V,RL=15Ω 2.5 μs
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB675 PACKAGE OUTLINE Fig.2 Outline dimensions