2SB673 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Darlington Power Transistor 2SB673

DESCRIPTION

  • High DC Current Gain- : hFE = 2000(Min)@ lc= -3A
  • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-100V(Min)
  • Low Collector Saturation Voltage- :VCE(sat)=-1.5V(Max)@lc=-3A
  • Complement to Type 2SD633

APPLICATIONS

  • High power switching applications.
  • Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25'C) SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-DC Collector Power Dissipation T — 9c;op ic " ^ Junction Temperature Storage Temperature Range VALUE -100 -100 -0.2 150 -55-150 UNIT V V V A A W r PIH 1 . ' ' " TO-: v >-*~ 'R- Vj I

1 Base

2 Collector

3 Emitter

!20C package i MQ U 1 A T » „ B «- j/r^i * H ' , ' I j K T h*" G (*- < 1 I i DIM A B C D F G H J K L Q R S U V -F "* mm MIN 15.50 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3,70 5.18 2.90 0.60 13.40 1.30 2.90 2.70 1.35 6.65 8.86 — t NJ Semi-Conduetors reserves the right to change test eonditions. parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. I lovvever. NJ Semi-Conduetors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Darlington Power Transistor 2SB673

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified SYMBOL V(BR)GEO VcE(sat)-1 VcE(sat)-2 VsE(sat) ICBO IEBO hpE-1 hpE-2 PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc= -50mA, IB= 0 lc= -3A,lB=-6mA lc=-7A,lB=-14mA lc=-3A,lB= -6mA VCB=-100V, IE=0 VEB= -5V; lc= 0 lc= -3A ; VCE= -3V lc= -7A ; VCE= -3V MIN -100 2000 1000 TYP. MAX -1.5 -2.0 -2.5 -100 15000 UNIT V V V V uA mA