2SB673 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB673
DESCRIPTION
- High DC Current Gain- : hFE = 2000(Min)@ IC= -3A
- Collector-Emitter Breakdown Voltage- : V (BR)CEO = -100V(Min)
- Low Collector Saturation Voltage- : V CE(sat) = -1.5V(Max)@ IC= -3A
- Complement to Type 2SD633
APPLICATIONS
- High power switching applications.
- Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A IB B Base Current-DC -0.2 A PC Collector Power Dissipation TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB673
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A ,IB= -14mA -2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A ,IB= -6mA -2.5 V ICBO Collector Cutoff Current VCB= -100V, IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -4 mA hFE-1 DC Current Gain IC= -3A ; VCE= -3V 2000 15000 hFE-2 DC Current Gain IC= -7A ; VCE= -3V 1000 Switching times ton Turn-on Time 0.8 μs tstg Storage Time 2.0 μs tf Fall Time RL= 15Ω, VCC= -45V IB1= -IB2= -6mA 2.5 μs isc Website：www.iscsemi.cn