2SB630 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
u <^£.m.L-(-onductoi , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB630
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEo= -200V(Min)
- Complement to Type 2SD610
APPLICATIONS
- Audio frequency power amplifier applications.
- Suitable for driver of 200~300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25'C Collector Power Dissipation @ TC=25°C Junction Temperature Storage Temperature Range VALUE -200 -200 -3.0 1.5 150 -55-150 UNIT V V V A A W - •"«• 2 * '-< FIB: 1 Base ' 2 Collector
3 Emitter
1 * 3 TO-220C package ua .»»" A » t " B H .» «« v H -'""F ±&v >v- 4-4-1 K H i cl A TT--L OL lfr° I DIV A B C D F G H J K L R S U tf _...v mm WIN 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13.00 1.10 2.70 2.30 1.29 6.45 8.66 MAX 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.60 13.40 1.45 2.90 2.70 1.35 6.65 8.86 "K J R[* NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors
Silicon PNP Power Transistor 2SB630
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified SYMBOL Vce(sat) VeE(sat) ICBO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -0.5A; IB= -50mA lc= -0.5A; IB= -50mA VCB=-150V; IE=0 VEB= -3V; lc= 0 lc=-5mA;VcE=-10V lc=-0.5A;VcE=-1pV lE=0;VcB=-10V;f=1MHz IC=-0.5A;VCE=-10V MIN TYP. MAX -1.0 -1.5 -1.0 -1.0 200 UNIT V V uA uA pF MHz hFE,2 Classifications s 40-80 R 60-120 Q 100-200