2SB630 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB630
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min)
- Complement to Type 2SD610
APPLICATIONS
- Audio frequency power amplifier applications.
- Suitable for driver of 200~300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3.0 A PC Collector Power Dissipation @ Ta=25℃ 1.5 W Collector Power Dissipation @ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB630
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -1.5 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -1.0 μ A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -1.0 μ A hFE-1 DC Current Gain IC= -5mA; VCE= -10V 20 hFE-2 DC Current Gain IC= -0.5A; VCE= -10V 40 200 COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz 65 pF fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 4 MHz hFE-2 Classifications S R Q 40-80 60-120 100-200