2SB621 PANASONIC

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2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A n Features l Low collector to emitter saturation voltage VCE(sat). l High transition frequency fT. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A 5.0–0.2 4.0–0.2 5.1–0.213.5–0.5 0.45 +0.2 –0.10.45 +0.2 –0.1 1.27 1.27 2.3–0.2 2.54–0.15 213 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –1.5 750 150 –55 ~ +150 Unit V V V A A mW 2SB621 2SB621A 2SB621 2SB621A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 * hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = –20V, IE = 0 IC = –10mA, IE = 0 IC = –2mA, IB = 0 IE = –10mA, IC = 0 V CE = –10V , IC = –500mA V CE = –5V , IC = –1A IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA V CB = –10V , IE = 50mA, f = 200MHz V CB = –10V , IE = 0, f = 1MHz min –30 –60 –25 –50 typ – 0.2 – 0.85 200 max – 0.1 340 –0.4 –1.2 Unit mA V V V V V MHz pF 2SB621 2SB621A 2SB621 2SB621A *hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340

Transistor 2SB621, 2SB621A 0 160 40 120 80 14020 100 60 1.0 0.8 0.6 0.4 0.2 0.9 0.7 0.5 0.3 0.1 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) –1.5 –1.25 –1.0 – 0.75 – 0.5 – 0.25 Ta=25˚C IB=–10mA –1mA –2mA –3mA –4mA –5mA –6mA –7mA –8mA –9mA Collector to emitter voltage VCE (V) Collector current IC (A) –1.2 –1.0 – 0.8 – 0.6 – 0.4 – 0.2 VCE =–10V TC =25˚C Base current IB (mA ) Collector current IC (A) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 –25˚C Ta=75˚C 25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=–25˚C 75˚C 25˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 500 400 300 200 100 450 350 250 150 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 1 3 10 30 100 200 160 120 180 140 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 –120 –100 –80 –60 –40 –20 IC =–10mA Ta=25˚C 2SB621A 2SB621 Base to emitter resistance RBE (kW ) Collector to emitter voltage VCER (V) PC —T a I C —V CE IC —I B V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I E C ob —V CB V CER —R BE

Transistor 2SB621, 2SB621A 0 160 40 120 80 14020 100 60 102 103 104 VCE =–10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 Single pulse Ta=25˚C t=10ms 2SB621A 2SB621 t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) ICEO — Ta Area of safe operation (ASO)