2SB601_2014 JMNIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
JMnic Product Specification Silicon PNP Power Transistors 2SB601
DESCRIPTION
- With TO-220C package
- DARLINGTON
- High DC current gain
- Low collector saturation voltage
APPLICATIONS
- For low-frequency power amplifier and low-speed switching applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current-DC -5 A ICM Collector current-Pulse -8 A IB Base current-DC -0.5 A TC=25℃ 30 PT Total power dissipation Ta=25℃ 1.5 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
JMnic Product Specification Silicon PNP Power Transistors 2SB601 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage I C=-3A, IB1=-3mA,L=1mH -100 V VCEsat Collector-emitter saturation voltage I C=-3A ,IB=-3mA -1.5 V VBEsat Base-emitter saturation voltage I C=-3A ,IB=-3mA -2.0 V ICBO Collector cut-off current V CB=-100V, IE=0 -10 μA ICEX Collector cut-off current VCE=-100V, VBE=-1.5V Ta=25℃ -10 -1.0 μA mA IEBO Emitter cut-off current V EB=-5V; IC=0 -3.0 mA hFE-1 DC current gain I C=-3A ; VCE=-2V 2000 15000 hFE-2 DC current gain I C=-5A ; VCE=-2V 500 Cob Output capacitance I E=0 ; VCB=-10V,f=0.1MHz 300 pF Switching times ton Turn-on time 0.5 μs tstg Storage time 1.0 μs tf Fall time IC=-3A; IB1=-IB2=-3mA VCC=-50V;RL=17Ω 1.0 μs hFE-1Classifications M L K 2000-5000 3000-7000 5000-15000
JMnic Product Specification Silicon PNP Power Transistors 2SB601 PACKAGE OUTLINE Fig.2 Outline dimensions