2SB600_2014 JMNIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
JMnic Product Specification Silicon PNP Power Transistors 2SB600
DESCRIPTION
- With TO-3 package
- High power dissipations
- Complement to type 2SD555
APPLICATIONS
- For use in audio and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -10 A PC Collector power dissipation TC=25℃ 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~200 ℃ Fig.1 simplified outline (TO-3) and symbol
JMnic Product Specification Silicon PNP Power Transistors 2SB600 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-25mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage I E=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage I C=-10A; IB=-1A -1.5 V VBEsat Base-emitter saturation voltage I C=-10A; IB=-1A -2.0 V ICBO Collector cut-off current V CB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current V EB=-5V; IC=0 -0.1 mA hFE DC current gain I C=-2A ; VCE=-5V 20 fT Transition frequency I C=-0.5A ; VCE=-10V 4 MHz
JMnic Product Specification Silicon PNP Power Transistors 2SB600 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm)