2SB600 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
«_/ , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistors 2SB600
DESCRIPTION
- Collector-Emitter Breakdown Voltage- : V,BR)CEO= -200V(Min)
- High Power Dissipation- : Pc= 200W(Max)@Tc=25°C
- Complement to Type 2SD555
APPLICATIONS
- Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25*C) SYMBOL VCBO VCEO VEBO Ic ICM PC Tj Tslg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -200 -200 -10 -15 200 150 -65-150 UNIT V V V A A W PIN l.Base 2.Emitter 3.Collestor(case) r-N-i I DIM A B c D E H K L N P U V 11)111 MM MAX 3900 25.30 7.8C 0.90 1.40 26 87 8.50 1.10 1.60 1092 54S 11.10 1675 19.40 400 30, no 4 30 13.50 17.05 19. $2 420 3020 450 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistors 2SB600
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL VcE(sat) VsE(sat) ICBO IEBO hpE-1 hFE-2 COB fr PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc=-10A; IB=-1A lc=-10A; IB=-1A VCB= -200V; IE= 0 VEB= -3V; lc= 0 lc= -50mA; VCE= -5V lc= -2A; Vce= -5V lE=0;VGB=-10V;f=1MHz lc=-1A;VCE=-10V MIN TYP. 400 MAX -3.0 -3.0 -0.1 -0.1 200 UNIT V V mA mA PF MHz hpE-2 Classifications s 40-80 R 60-120 Q 100-200